Gate tunable charged-phonon effect in bilayer graphene - Condensed Matter > Strongly Correlated ElectronsReportar como inadecuado




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Abstract: We observe a giant increase of the infrared intensity and a softening of thein-plane antisymmetric phonon mode Eu ~0.2 eV in bilayer graphene as afunction of the gate-induced doping. The phonon peak has a pronounced Fano-likeasymmetry. We suggest that the intensity growth and the softening originatefrom the coupling of the phonon mode to the narrow electronic transitionbetween parallel bands of the same character, while the asymmetry is due to theinteraction with the continuum of transitions between the lowest hole andelectron bands. The growth of the peak is a manifestation of the-charged-phonon- effect observed previously in organic chain conductors anddoped fullerenes, which can now be tuned with the gate voltage.



Autor: A. B. Kuzmenko, L. Benfatto, E. Cappelluti, I. Crassee, D. van der Marel, P. Blake, K. S. Novoselov, A. K. Geim

Fuente: https://arxiv.org/







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