Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline filmsReportar como inadecuado




Influence of neodymium concentration on excitation and emission properties of Nd doped gallium oxide nanocrystalline films - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

1 Institute of Physics 2 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique

Abstract : Articles you may be interested in Investigation on the compensation effect of residual carbon impurities in low temperature grown Mg doped GaN films J. Appl. Phys. 115, 163704 2014; 10.1063-1.4873957 Elevated temperature dependent transport properties of phosphorus and arsenic doped zinc oxide thin films J. Appl. Phys. 114, 223709 2013; 10.1063-1.4845855 Improvement of 004 texturing by slow growth of Nd doped TiO2 films J. Appl. Phys. 112, 113505 2012; 10.1063-1.4767361 Visible light emission and energy transfer processes in Sm-doped nitride films J. Appl. Phys. 111, 123105 2012; 10.1063-1.4729911 Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering J. Appl. Phys. 106, 073709 2009 Gallium oxide and more particularly ␤-Ga 2 O 3 matrix is an excellent material for new generation of devices electrically or optically driven as it is known as the widest band gap transparent conductive oxide. In this paper, the optical properties of neodymium doped gallium oxide films grown by magnetron sputtering have been analyzed. The influence of the Nd ions concentration on the excitation-emission mechanisms of Nd ions and the role of gallium oxide matrix have been investigated. The grain size reduction into gallium oxide films have been observed when concentration of Nd increases. It has been found for all samples that the charge transfer is the main excitation mechanism for Nd ions where defect states play an important role as intermediate states. As a consequence Nd emission efficiency increases with temperature giving rise to most intensive emission at 1087 nm at room temperature.





Autor: A Podhorodecki - M Banski - J Misiewicz - Céline Lecerf - P Marie - J. Cardin - X Portier -

Fuente: https://hal.archives-ouvertes.fr/



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