Effect of annealing and Nd concentration on the photoluminescence of Nd3 ions coupled with silicon nanoparticlesReportar como inadecuado




Effect of annealing and Nd concentration on the photoluminescence of Nd3 ions coupled with silicon nanoparticles - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique 2 Institute of Physics

Abstract : We report on the microstructure and photoluminescencePL properties of Nd-doped SiO2 thin films containing silicon nanoparticles Si-np as a function of the annealing temperature and the Nd concentration. The thin films, which were grown on Si substrates by reactive magnetron co-sputtering, contain the same Si excess. Fourier transform infrared FTIRspectra show that a phase separation occurs during the annealing due to the agglomeration of the Si excess resulting in the formation of Si-np. Besides, after annealing, the films exhibit PL from excitonic states confined in Si-np. We showed that the intensity of the PL of Nd3+ions that occurs at ∼0.92, 1.06, and 1.4 μm is maximal at low Nd concentration and while well-passivated Si-np are formed. FTIR and x-ray measurements showed that the increase in the Nd incorporation has detrimental effects on the PL of Nd3+ because of the formation of Nd2O3nanocrystals and inherent disorder in the SiO2 host matrix. PL excitation measurements demonstrate that the PL of Nd3+ions is nonresonant and follows the excitation of Si-np giving new evidence of the energy transfer from Si-np toward the rare earth ions.





Autor: Olivier Debieu - David Bréard - Artur Podhorodecki - Grzegorz Zatryb - Jan Misiewicz - Christophe Labbe - Julien Cardin - Fabric

Fuente: https://hal.archives-ouvertes.fr/



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