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Abstract: We describe a systematic study of the exchange coupling between amagnetically hard metallic ferromagnet MnAs and a magnetically softferromagnetic semiconductor GaMnAs in bilayer and trilayer heterostructures.An exchange spring model of MnAs-GaMnAs bilayers accounts for the variation ofthe exchange bias field with layer thickness and composition. We also presentevidence for hole-mediated interlayer exchange coupling in MnAs-p-GaAs-\GaMnAstrilayers and study the dependence of the exchange bias field on the thicknessof the spacer layer.



Autor: M. J. Wilson, M. Zhu, R. C. Myers, D. D. Awschalom, P. Schiffer, N. Samarth

Fuente: https://arxiv.org/







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