Scale-up of DS-silicon growth process under TMFReport as inadecuate

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1 Leibnitz Institute for Crystal Growth

Abstract : Despite many research studies of DS-Si growth under TMF at lab scale, transfer of technology to industrial scale is still empirical and limited to low scale-up ratios. To assure safe upscaling, we derived a set of similarity principles for numerical modeling of DS-Si processes in TMF and verified the obtained numerical results with experimental data gained in G1-, G2- and G5-sized furnaces provided with KRISTMAG® heater magnet modules. Results pointed out that shared parameters with various exponentiation in various dimensionless numbers hindered accurate upscaling. Nevertheless, with selection of crucial dimensionless numbers and correct definition of the characteristic parameters, the fundamental upscaling from G1 to G5 is feasible.

Keywords : directional solidification simulation silicon travelling magnetic field scale-up

Author: N Dropka - T Ervik - F.M. Kiessling -



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