Postdeposition Annealing Effect on Cu2ZnSnS4 Thin Films Grown at Different Substrate TemperatureReport as inadecuate

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International Journal of Photoenergy - Volume 2014 2014, Article ID 589027, 7 pages -

Research Article

Solar Energy Research Institute SERI, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia

Advanced Materials Research Chair AMRC, Chemistry Department, College of Sciences, King Saud University, Riyadh 11451, Saudi Arabia

Department of Electrical, Electronic and Systems Engineering, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia

Received 26 January 2014; Revised 15 March 2014; Accepted 17 March 2014; Published 29 April 2014

Academic Editor: Raghu N. Bhattacharya

Copyright © 2014 Samia Ahmed Nadi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Cu2ZnSnS4 CZTS thin films were deposited on top of Molybdenum Mo coated soda lime glass SLG substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon Ar gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature RT, 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction XRD measurement revealed the structure to be kesterite with peak of 112 plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2, , , , and Cu6MoSnS8 hemusite were also observed in the annealed CZTS films. Scanning electron microscopy SEM shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy AFM. The conductivity type of the films was found to be p-type by Hall effect measurement system.

Author: Samia Ahmed Nadi, Puvaneswaran Chelvanathan, Zaihasraf Zakaria, Mohammad Mezbaul Alam, Zeid A. Alothman, Kamaruzzaman Sopian,



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