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Advances in Condensed Matter Physics - Volume 2015 2015, Article ID 587696, 6 pages -

Research Article

Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania, Philadelphia, PA 19104, USA

Department of Mechanical Engineering, Widener University, One University Place, Chester, PA 19013, USA

Advanced Microelectronic Center Aachen AMICA, AMO GmbH, Otto-Blumenthalstraße 25, 52074 Aachen, Germany

Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, ON, Canada N2L 3G1

Department of Materials Science and Engineering, Drexel University, Philadelphia, PA 19104, USA

Received 19 April 2015; Revised 7 June 2015; Accepted 8 June 2015

Academic Editor: Da-Ren Hang

Copyright © 2015 Keivan Davami et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

While attributes such as small dimensions, low power consumption, fast sensor response, and a wide range of detection give one-dimensional nanostructures excellent potential to revolutionize sensor and detector industries, challenges to achieving uniform stoichiometry pose significant obstacles to their commercial use. Diverse characteristics arise from nanostructures with variable compositions and morphologies. Thus, investigation of physical properties of nanostructures would be pointless if one cannot assure the exact stoichiometry of the material. We studied the stoichiometry of ZnTe nanowires grown via the vapor-liquid-solid method. Different microscopy and composition analysis methods were exploited to study the stoichiometry of the nanowires. It was observed that nonstoichiometric wires had relatively higher defect concentrations. The temperature profile along the substrate during nanowire growth was found to be the reason for the formation of nanowires with different stoichiometries.





Autor: Keivan Davami, Mehrdad Shaygan, Nazli Kheirabi, and Hessam Ghassemi

Fuente: https://www.hindawi.com/



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