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Abstract: We calculate the full transport counting statistics in a three-terminaltunnel device with one superconducting source and two normal-metal orferromagnet drains. We obtain the transport probability distribution fromdirect Andreev reflection, crossed Andreev reflection, and electron transferwhich reveals how these processes- statistics are determined by the deviceconductances. The cross-correlation noise is a result of competingcontributions from crossed Andreev reflection and electron transfer, as well asantibunching due to the Pauli exclusion principle. For spin-active tunnelbarriers that spin polarize the electron flow, crossed Andreev reflection andelectron transfer statistics exhibit different dependencies on themagnetization configuration, and can be controlled by relative magnetizationdirections and voltage bias.



Autor: Jan Petter Morten, Daniel Huertas-Hernando, Wolfgang Belzig, Arne Brataas

Fuente: https://arxiv.org/



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