Improving Performance of InGaN-GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold NanoclustersReportar como inadecuado

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Journal of NanomaterialsVolume 2009 2009, Article ID 840791, 5 pages

Research Article

Department of Physics, Center for Nanotechnology, Chung Yuan Christian University cycu, Chung-Li 32023, Taiwan

Institute of Nuclear Energy Research, P.O. Box 3-11, Lungtan 32546, Taiwan

Department of Biomedical Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan

Institute of Optoelectronic Sciences, National Taiwan Ocean University, Keelung 20224, Taiwan

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsin-Chu 30010, Taiwan

Received 20 January 2009; Accepted 26 August 2009

Academic Editor: Ching Ping Wong

Copyright © 2009 M. D. Yang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We studied the optoelectronic properties of the InGaN-GaN multiple-quantum-well light emitting diodes LEDs and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN-GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells.

Autor: M. D. Yang, S. W. Wu, G. W. Shu, J. S. Wang, J. L. Shen, C. H. Wu, C. A. J. Lin, W. H. Chang, T. Y. Lin, T. C. Lu, and H



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