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Abstract: The correlation between antiferromagnetic and ferroelectric domain structuresin multiferroics has been studied. The role of magnetoelectric interactions ina formation of antiferromagnetic domain structure has been analysed. It hasbeen shown the major physical mechanism binding antiferromagnetic domains toferroelectrics ones is inhomogeneous flexomagnetoelectric interaction of thePzlgradlz-lzdivl type. The dependences illustrating rearrangement ofantiferromagnetic domain pattern together with change of ferroelectric domainsthickness has been performed.



Autor: Z.V.Gareeva, A.K. Zvezdin

Fuente: https://arxiv.org/







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