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International Journal of Photoenergy - Volume 2014 2014, Article ID 836284, 10 pages -

Research Article

Ioffe Physical-Technical Institute of the Russian Academy of Sciences, Polytechnicheskaya Street 26, Saint Petersburg 194021, Russia

Saint-Petersburg Academic University, Nanotechnology Research and Education Centre RAS, Hlopina Street 8-3, Staint Petersburg 194021, Russia

Technical University of Madrid, Spain

Received 12 December 2013; Revised 31 March 2014; Accepted 5 April 2014; Published 5 May 2014

Academic Editor: Niyaz Mohammad Mahmoodi

Copyright © 2014 N. A. Kalyuzhnyy et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A number of important but little-investigated problems connected with III-V-Ge heterostructure in the GaInP-GaInAs-Ge multijunction solar cells grown by MOVPE are considered in the paper. The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated. Photovoltaic properties of the III-V-Ge narrow-band subcell of the triple-junction solar cells have been investigated. It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character. The values of the diode parameters for these current flow mechanisms have been determined. The potential barrier at the III-V-Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested.

Autor: N. A. Kalyuzhnyy, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, M. A. Mintairov, A. S. Gudovskikh, A. Luque, and V. M.



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