Modeling, Design, and Fabrication of Self-Doping Si1−xGex-Si Multiquantum Well Material for Infrared SensingReportar como inadecuado

Modeling, Design, and Fabrication of Self-Doping Si1−xGex-Si Multiquantum Well Material for Infrared Sensing - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Journal of Sensors - Volume 2016 2016, Article ID 6584650, 7 pages -

Research Article

Mechanical Engineering School, Nanjing University of Science and Technology, Nanjing, China

Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen, China

Department of Micro and Nano Systems Technology IMST, Faculty of Technology and Maritime Sciences, Buskerud and Vestfold University College, Raveien 205, 3184 Borre, Norway

Received 17 September 2015; Accepted 22 October 2015

Academic Editor: Wei Cao

Copyright © 2016 Bo Jiang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The paper presents the study of band distributions and thermoelectric properties of self-doping Si1−xGex-Si multiquantum well material for infrared detection. The simulations of different structures including boron doping, germanium concentrations, and SiGe layer thickness have been conducted. The critical thickness of SiGe layer grown on silicon substrate has also been illustrated in the paper. The self-doping Si1−xGex-Si multiquantum well material was epitaxially grown on SOI substrate with reduced pressure chemical vapor deposition. Each layer of the material is clear in the SEM. The characterizations and temperature resistance coefficient TCR tests were also performed to show the thermoelectric properties. The TCR was about −3.7%-K at room temperature in the experiments, which is competitive with the other thermistor materials. The material is a low noise material, whose root mean square noise is 1.89 mV in the experiments.

Autor: Bo Jiang, Dandan Gu, Yulong Zhang, Yan Su, Yong He, and Tao Dong



Documentos relacionados