Dynamic Read Destructive Faults in Embedded-SRAMs: Analysis and March Test SolutionReportar como inadecuado

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1 SysMIC - Conception et Test de Systèmes MICroélectroniques LIRMM - Laboratoire d-Informatique de Robotique et de Microélectronique de Montpellier 2 INFINEON TECHNOLOGIES FRANCE - Centre de recherche et développement international en design pour la micro-électronique

Abstract : This paper presents an analysis of dynamic faults in core-cell of SRAM memories. These faults are the consequence of resistive-open defects that appear more frequently in VDSM technologies. In particular, the study concentrates on those defects that generate dynamic Read Destructive Faults, dRDFs. In this paper, we demonstrate that read or write operations on a cell involve a stress on the other cells of the same word line. This stress, called Read Equivalent Stress RES, has the same effect than a read operation. On this basis, we propose to modify the well known March C-, which does not detect dRDFs, into a new version able to detect them. This is obtained by changing its addressing order with the purpose of producing the maximal number of RES. This modification does not change the complexity of the algorithm and its capability to detect the former target faults.

Keywords : Memory testing SRAM core-cell dynamic faults resistive-open defects March test

Autor: Luigi Dilillo - Patrick Girard - Serge Pravossoudovitch - Arnaud Virazel - Simone Borri Magali Hage-Hassan -

Fuente: https://hal.archives-ouvertes.fr/


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