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Journal of NanomaterialsVolume 2013 2013, Article ID 162315, 6 pages

Research Article

Unit for Nanoscience, Department of Condensed Matter Physics and Material Sciences, S.N. Bose National Centre for Basic Sciences, Salt Lake, Kolkata 700098, India

Department of Physics, University of South Florida, Tampa, FL 33620, USA

Received 11 December 2012; Accepted 17 February 2013

Academic Editor: Lijun Ji

Copyright © 2013 Subarna Datta et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report here the growth and characterization of functional oxide nanowire of hole doped manganite of La0.5Sr0.5MnO3 LSMO. We also report four-probe electrical resistance measurement of a single nanowire of LSMO diameter ~45 nm using focused ion beam FIB fabricated electrodes. The wires are fabricated by hydrothermal method using autoclave at a temperature of 270 °C. The elemental analysis and physical property like electrical resistivity are studied at an individual nanowire level. The quantitative determination of Mn valency and elemental mapping of constituent elements are done by using Electron Energy Loss Spectroscopy EELS in the Transmission Electron Microscopy TEM mode. We address the important issue of whether as a result of size reduction the nanowires can retain the desired composition, structure, and physical properties. The nanowires used are found to have a ferromagnetic transition at around 325 K which is very close to the bulk value of around 330 K found in single crystal of the same composition. It is confirmed that the functional behavior is likely to be retained even after size reduction of the nanowires to a diameter of 45 nm. The electrical resistivity shows insulating behavior within the measured temperature range which is similar to the bulk system.

Autor: Subarna Datta, Sayan Chandra, Sudeshna Samanta, K. Das, H. Srikanth, and Barnali Ghosh



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