Improving the RF Performance of Carbon Nanotube Field Effect TransistorReportar como inadecuado

Improving the RF Performance of Carbon Nanotube Field Effect Transistor - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Journal of NanomaterialsVolume 2012 2012, Article ID 724121, 7 pages

Research ArticleFaculty of Sciences I, Lebanese University, Beirut, Lebanon

Received 27 September 2011; Accepted 9 February 2012

Academic Editor: Teng Li

Copyright © 2012 S. Hamieh. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Compact model of single-walled semiconducting carbonnanotube field-effect transistors CNTFETs implementing thecalculation of energy conduction subband minima under VHDLAMSsimulator is used to explore the high-frequency performancepotential of CNTFET. The cutoff frequency expected fora MOSFET-like CNTFET is well below the performance limit,due to the large parasitic capacitance between electrodes. Weshow that using an array of parallel nanotubes as the transistorchannel combined in a finger geometry to produce a singletransistor significantly reduces the parasitic capacitance per tubeand, thereby, improves high-frequency performance.

Autor: S. Hamieh



Documentos relacionados