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International Journal of PhotoenergyVolume 2009 2009, Article ID 374301, 7 pages

Research ArticleDepartment of Physics, Science and Art Faculty, Batman University, 72060 Batman, Turkey

Received 17 April 2009; Accepted 8 July 2009

Academic Editor: Fahrettin Yakuphanoglu

Copyright © 2009 Ömer Güllü. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

An Al-methyl-red-p-InP solar cell was fabricated via solution-processing method and was characterized by using current-voltage I-V and capacitance-voltage-frequency C-V-f measurements at room temperature. From dark I-V characteristics, the values of ideality factor and barrier height of the device were calculated as 1.11 eV and 2.02, respectively. It has been seen that the device exhibited a good photovoltaic behavior with a maximum open circuit voltage of 0.38 V and short-circuit current of 2.8 nA under only 200 lx light intensity. The barrier height and acceptor carrier concentration values for the Al-methyl-red-p-InP devices were extracted as 1.27 eV and   from linear region of its characteristics, respectively. The difference between I-V and C-V for Al-methyl-red-p-InP device was attributed the different nature of the I-V and C-V measurements. Also, the energy distribution curves of the interface states and their time constants were obtained from the experimental conductance properties of the Al-methyl-red-p-InP structure at room temperature. The interface state densities and their relaxation times of the device have ranged from   and s at 1.11- eV to    and s at 0.79- eV, respectively. It was seen that both the interface state density and the relaxation time of the interface states have decreased with bias voltage from experimental results.





Autor: Ömer Güllü

Fuente: https://www.hindawi.com/



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