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Advances in Materials Science and Engineering - Volume 2016 2016, Article ID 6279162, 7 pages -

Research ArticleElectronics Laboratory, Institute of Electrical Engineering, School of Engineering, Ecole Polytechnique Fédérale de Lausanne EPFL, 1015 Lausanne, Switzerland

Received 1 February 2016; Accepted 11 May 2016

Academic Editor: Antonio Riveiro

Copyright © 2016 Maria-Alexandra Paun. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structures. On this occasion, numerical information on the input resistance, Hall voltage, conduction current, and electrical potential distribution has been obtained. Experimental results for the absolute sensitivity, offset, and offset temperature drift have also been provided. A quadratic behavior of the residual offset with the temperature was obtained and the temperature points leading to the minimum offset for the three Hall cells were identified.

Autor: Maria-Alexandra Paun



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