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Active and Passive Electronic ComponentsVolume 2013 2013, Article ID 627873, 9 pages

Research ArticleDepartment of Electrical Engineering, National Sun Yat-Sen University, No. 70 Lien-hai Road, Kaohsiung 80424, Taiwan

Received 9 October 2012; Accepted 28 November 2012

Academic Editor: Kuan-Wei Lee

Copyright © 2013 Jyi-Tsong Lin et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We demonstrate improved device performance by applying oxide sidewall spacer technology to a block-oxide-enclosed Si body to create a fully depleted silicon-on-insulator FDSOI nMOSFET, which overcomes the need for a uniform ultrathin silicon film. The presence of block-oxide along the sidewalls of the Si body significantly reduces the influence of drain bias over the channel. The proposed FDSOI structure therefore outperforms conventional FDSOI with regard to its drain-induced barrier lowering DIBL, on-off current ratio, subthreshold swing, and threshold voltage rolloff. The new FDSOI structure is in fact shown to behave similarly to an ultrathin body UTB SOI but without the associated disadvantages and technological challenges of the ultrathin film, because a thick Si body allows for reduced sensitivity to self-heating, thereby improving thermal stability.

Autor: Jyi-Tsong Lin, Yi-Chuen Eng, and Po-Hsieh Lin

Fuente: https://www.hindawi.com/


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