Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted DepositionReportar como inadecuado




Impact of NiOx Buffer Layers on the Dielectric Properties of BaTiO3 Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Journal of Nanomaterials - Volume 2015 2015, Article ID 167569, 7 pages -

Research Article

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China

Institute of Electronic and Information Engineering in Dongguan, University of Electronic Science and Technology of China, Dongguan, Guangdong 523808, China

Received 26 January 2015; Revised 23 May 2015; Accepted 28 May 2015

Academic Editor: Joydeep Dutta

Copyright © 2015 Hui Du et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate BaTiO3 BTO thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition PAD method using NiOx as the buffer layers. The NiOx buffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2 solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO-Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOx buffer layer. The conduction mechanisms of the BTO-Ni heterostructure have been discussed according to the J-V characteristic curves.





Autor: Hui Du, Yang Li, Wei Zheng Liang, Yu Xuan Wang, Min Gao, Wen Huang, Yin Zhang, and Yuan Lin

Fuente: https://www.hindawi.com/



DESCARGAR PDF




Documentos relacionados