Structural and Magnetic Properties of Ni81Fe19 Thin Film Grown on Si001 Substrate via Single Graphene LayerReportar como inadecuado




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Journal of Nanomaterials - Volume 2015 2015, Article ID 575401, 5 pages -

Research ArticleSchool of Electronics and Information, Northwestern Polytechnical University, 127 West Youyi Road, Xi’an, Shaanxi 710072, China

Received 10 December 2014; Accepted 5 February 2015

Academic Editor: Yuanlie Yu

Copyright © 2015 Gui-fang Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We prepared magnetic thin films Ni81Fe19 on single-crystal Si001 substrates via single graphene layer through magnetron sputtering for Ni81Fe19 and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni81Fe19 thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si001 substrate. Furthermore, saturation magnetization of Ni81Fe19-graphene-Si001 heterostructure increased to 477 emu-cm

with annealing temperature °C, which is much higher than values of Ni81Fe19-Si001 heterostructures with ranging from 200°C to 400°C.





Autor: Gui-fang Li, Shibin Liu, Shanglin Yang, and Yongqian Du

Fuente: https://www.hindawi.com/



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