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International Journal of Photoenergy - Volume 1 1999, Issue 2, Pages 107-115

Istituto LAMEL-CNR, via Gobetti 101, Bologna, Italy

Copyright © 1999 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In the present paper the most interesting results of a work on the influence of some processesused in the fabrication of microstructures on the bulk and surface electrical activity of the Si substrate arereported. In these studies the minority carrier lifetime and the surface recombination velocity were used assensors of the Si electrical activity changes. Other electrical DLTS, C-V and I-V characteristics, EBIC andstructural X-ray double crystal diffractometry, IR spectroscopy techniques were used to gather informationabout the nature and concentration of the defects induced by processing.

Two processes have been investigated: Rapid Thermal Annealing treatments RTA, and Reactive Ion EtchingRIE: neither of them have a large influence on the minority carrier diffusion length when the substrate isan high quality Si wafer of the last production. On the contrary, the surface recombination velocity is largelyinfluenced by both processes. The rearrangement of the surface structure and the formation and growth ofhillocks is proposed as the more important mechanism responsible of the observed changes in the surfaceelectrical activity.

Autor: Enrichetta Susi



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