Preparation of the group III nitride thin films AlN, GaN, InN by direct and reactive pulsed laser ablationReportar como inadecuado

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International Journal of Photoenergy - Volume 3 2001, Issue 3, Pages 111-121

Dipartimento di Chimica, Università degli Studi di Roma -La Sapienza-, P.le A. Moro 5, Roma 00185, Italy

CNR, Istituto Materiali Speciali, via S. Loja, 85050 Tito Scalo PZ, Italy

Material Science Research Center of Excellence, Howard University, Washington, DC 20059, USA

Dipartimento di Chimica, Università della Basilicata, via N. Sauro, Potenza 85100, Italy

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The methods of preparation of the group III nitrides AlN, GaN, and InN by laser ablation i.e. lasersputtering, is here reviewed including studies on their properties. The technique, concerns direct ablationof nitride solid targets by laser to produce a plume which is collected on a substrate. Alternatively nitridedeposition is obtained as a result of laser ablation of the metal and subsequent reaction in an NH3 atmosphere. Optical multichannel emission spectroscopic analysis, and time of flight TOF mass spectrometryhave been applied for in situ identification of deposition precursors in the plume moving from the target.Epitaxial AlN, GaN, and InN thin films on various substrates have been grown. X-ray diffraction, scanningelectron microscopy, have been used to characterise thin films deposited by these methods.

Autor: Aldo Mele, Anna Giardini, Tonia M. Di Palma, Chiara Flamini, Hideo Okabe, and Roberto Teghil



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