Corrigendum to -Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVDReportar como inadecuado




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International Journal of Photoenergy - Volume 2016 2016, Article ID 2753812, 1 page -

Corrigendum

NTT Institute of Hi-Technology, Nguyen Tat Thanh University, Ho Chi Minh City 70000, Vietnam

Thin Film Solar Cells Laboratory, Department of Chemical Engineering, National Taiwan University of Science and Technology NTUST, Taipei City 106, Taiwan

Ho Chi Minh City University of Natural Resources and Environment HCMUNRE, Ho Chi Minh City 70000, Vietnam

Received 15 August 2016; Accepted 7 September 2016

Copyright © 2016 Long Giang Bach et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

In the article titled -Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD- 1, Dr. Lu-Sheng Hong was missing from the authors’ list. The corrected authors’ list is shown above.

References

L. G. Bach, N. G. Nguyen, and V. T. Thanh Ho -Enhanced light scattering by preferred orientation control of Ga doped ZnO films prepared through MOCVD,- International Journal of Photoenergy, vol. 2016, Article ID 1217576, 7 pages, 2016. View at Publisher · View at Google Scholar



Autor: Long Giang Bach, Nam Giang Nguyen, Van Thi Thanh Ho, and Lu-Sheng Hong

Fuente: https://www.hindawi.com/



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