Prospects of 4H-SiC Double Drift Region IMPATT Device as a Photo-Sensitive High-Power Source at 0.7 Terahertz Frequency RegimeReportar como inadecuado




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Active and Passive Electronic ComponentsVolume 2008 2008, Article ID 275357, 9 pages

Research Article

Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, India

International Institute of Information Technology, Visva Bharati University, X-1, 8-3, Block-EP, Sector V, Salt Lake Electronics Complex, Kolkata 700091, India

Centre of Millimeterwave Semiconductor Devices and Systems, Centre of Advanced Study in Radiophysics and Electronics, University of Calcutta 1, Girish Vidyaratna Lane, Kolkata 700009, India

Received 4 December 2007; Accepted 14 March 2008

Academic Editor: Tibor Berceli

Copyright © 2008 Moumita Mukherjee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The dynamic performance of wide-bandgap 4H-SiC based double drift region IMPATT diode is simulated for the first time at terahertz frequency 0.7 Terahertz region. The simulation experiment establishes the potential of SiC based IMPATT diode as a high power   terahertz source. The parasitic series resistance in the device is found to reduce the RF power output by 10.7%. The effects of external radiation on the simulated diode are also studied. It is found that i the negative conductance and ii the negative resistance of the diode decrease, while, the frequency of operation and the quality factor shift upward under photoillumination. Holes in 4H-SiC based IMPATT are found to dominate the modulation activities. The inequality in the magnitude of electron and hole ionization rates in the semiconductors may be correlated with these findings.





Autor: Moumita Mukherjee, Nilratan Mazumder, and Sitesh Kumar Roy

Fuente: https://www.hindawi.com/



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