Light-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone ArrayReportar como inadecuado




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The Scientific World JournalVolume 2014 2014, Article ID 837586, 6 pages

Research ArticleEngineering Research Center for Optoelectronics of Guangdong Province, Department of Physics, School of Science, South China University of Technology, Guangzhou, Guangdong 510640, China

Received 10 April 2014; Accepted 1 July 2014; Published 15 July 2014

Academic Editor: Paolo Colantonio

Copyright © 2014 Huamao Huang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Three-dimensional 3D backside reflector, compared with flat reflectors, can improve the probability of finding the escape cone for reflecting lights and thus enhance the light-extraction efficiency LEE for GaN-based light-emitting diode LED chips. A triangle-lattice of microscale SiO2 cone array followed by a 16-pair Ti3O5-SiO2 distributed Bragg reflector 16-DBR was proposed to be attached on the backside of sapphire substrate, and the light-output enhancement was demonstrated by numerical simulation and experiments. The LED chips with flat reflectors or 3D reflectors were simulated using Monte Carlo ray tracing method. It is shown that the LEE increases as the reflectivity of backside reflector increases, and the light-output can be significantly improved by 3D reflectors compared to flat counterparts. It can also be observed that the LEE decreases as the refractive index of the cone material increases. The 3D 16-DBR patterned by microscale SiO2 cone array benefits large enhancement of LEE. This microscale pattern was prepared by standard photolithography and wet-etching technique. Measurement results show that the 3D 16-DBR can provide 12.1% enhancement of wall-plug efficiency, which is consistent with the simulated value of 11.73% for the enhancement of LEE.





Autor: Huamao Huang, Jinyong Hu, and Hong Wang

Fuente: https://www.hindawi.com/



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