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Advances in Physical Chemistry - Volume 2014 2014, Article ID 965350, 6 pages -

Research Article

Physics Department, Birla College, Kalyan 421301, India

Department of Physics, Solapur University, Solapur 413255, India

N.S.N. Research Center for Nanotechnology & Bionanotechnology, Jambhul Phata, Ambernath W 421505, India

Received 19 August 2013; Revised 15 October 2013; Accepted 13 November 2013; Published 9 January 2014

Academic Editor: Taicheng An

Copyright © 2014 Harish K. Dubey et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Needle shaped SbTeI crystals were obtained by solid state reaction. Electrical resistance was measured in the temperature range of 4 K to 550 K. SbTeI shows a metallic behavior from 4 K to 300 K, and at higher temperature >300 K, it shows semiconducting behavior. Unlike SbSI, this material shows almost zero resistance around 550 K. It shows a piezoelectric behavior with a capacitance of 717 pF and its carrier density and nobilities are found to be 2.12 × 10


and 1.01 cm

-V·s, respectively. Crystals of SbTeI are characterized by XRD, SEM, and Raman analysis. Electrical activation energy is found to be 0.52 eV. It is suggested that this material may be studied for its application as a superconductor with Tc higher than room temperature.

Autor: Harish K. Dubey, L. P. Deshmukh, D. E. Kshirsagar, Madhuri Sharon, and Maheshwar Sharon



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