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Abstract: We have fabricated aluminum single-electron transistors in which the islandis not in contact with the substrate. This new type of device, which can becalled suspended single-electron transistor SUSET, displayed well-defined I-Vand dI-dV-V features typical for high-quality standard SET-s.



Autor: G. S. Paraoanu, A. M. Halvari

Fuente: https://arxiv.org/







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