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Abstract: The capacitance of arrays of vertical wrapped-gate InAs nanowires areanalyzed. With the help of a Poisson-Schr-odinger solver, information about thedoping density can be obtained directly. Further features in the measuredcapacitance-voltage characteristics can be attributed to the presence ofsurface states as well as the coexistence of electrons and holes in the wire.For both scenarios, quantitative estimates are provided. It is furthermoreshown that the difference between the actual capacitance and the geometricallimit is quite large, and depends strongly on the nanowire material.



Autor: O. Karlström, A. Wacker, K. Nilsson, G. Astromskas, S. Roddaro, L. Samuelson, L.-E. Wernersson

Fuente: https://arxiv.org/



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