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VLSI Design - Volume 13 2001, Issue 1-4, Pages 85-90



Semiconductor Physics Institute, Vilnius, Lithuania

Universidad de Salamanca, Salamanca, Spain

Università di Lecce, Lecce, Italy

Université Montpellier II, Montpellier Cedex 5 34095, France

Semiconductor Physics Institute, Goshtauto 11, Vilnius 2600, Lithuania



Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We present a generalized transfer field method with the microscopic noise sourcesdirectly connected with the velocity and energy change during single scattering events.The advantages of this method are illustrated by hydrodynamic calculations of currentand voltage noise spectra in several two-terminal submicron structures.





Autor: P. Shiktorov, E. Starikov, V. Gruzinskis, T. GonzáLez, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiére

Fuente: https://www.hindawi.com/



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