Preparation and thermoelectric properties of p-type Bi0.52Sb1.48Te3 3% Te thin filmsReportar como inadecuado




Preparation and thermoelectric properties of p-type Bi0.52Sb1.48Te3 3% Te thin films - Descarga este documento en PDF. Documentación en PDF para descargar gratis. Disponible también para leer online.

Chinese Science Bulletin

, Volume 57, Issue32, pp 42204224

First Online: 16 March 2012Received: 02 November 2011Accepted: 21 December 2011DOI: 10.1007-s11434-012-5018-1

Cite this article as: Zhang, J., Yang, J., Feng, S.
et al.
Chin.
Sci.
Bull.
2012 57: 4220.
doi:10.1007-s11434-012-5018-1

Abstract

Thin films of p-type Bi0.52Sb1.48Te3 + 3% Te were deposited on glass substrates by flash evaporation.
X-ray diffraction and field-emission scanning electron microscopy were performed to characterize the thin films, and the effects of preparation and annealing parameters on the thermoelectric properties were investigated.
It was shown that the power factors of the films increased with increasing deposition temperature.
Annealing the as-deposited films improved the power factors when the annealing time was less than 90 min and the annealing temperature was lower than 250C.
A maximum power factor of 10.66 W cm K was obtained when the film was deposited at 200C and annealed at 250C for 60 min.

Keywordsflash evaporationthin filmthermoelectric propertiesbismuth tellurideThis article is published with open access at Springerlink.com

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Autor: JianShengZhang - JunYouYang - ShuangLongFeng - ZhengLaiLiu - JiangYingPeng

Fuente: https://link.springer.com/



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