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Journal of Nanomaterials - Volume 2015 2015, Article ID 847018, 6 pages -

Research Article

King Saud University, Department of Physics and Astronomy, College of Sciences, Riyadh 11451, Saudi Arabia

Université de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences, Avenue de l’Environnement, 5019 Monastir, Tunisia

Received 2 June 2015; Revised 5 August 2015; Accepted 13 August 2015

Academic Editor: Paulo Cesar Morais

Copyright © 2015 Bouraoui Ilahi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper investigates the impact of the deposition rate on the mean buried InAs-GaAs quantum dots’ QDs size by means of a coupled photoluminescence spectroscopy and numerical approach. The proposed method consists in tuning the theoretical transition energies by changing the QDs aspect ratio towards best fit of the photoluminescence emission energies arising from the state filling effect. The electron-hole confined states are obtained by solving the single particle one band effective mass Schrödinger equation in cylindrical coordinates for a lens shaped QD by finite element method taking into account the strain effects. The obtained evolution is in agreement with morphological data taken from similar uncapped QDs samples.

Autor: Bouraoui Ilahi, Manel Souaf, Mourad Baira, Jawaher Alrashdi, Larbi Sfaxi, Abdulaziz Alhazaa, and Hassen Maaref

Fuente: https://www.hindawi.com/


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