Superconductivity of hexagonal heavily-boron doped silicon carbide - Condensed Matter > SuperconductivityReportar como inadecuado




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Abstract: In 2004 the discovery of superconductivity in heavily boron-doped diamondC:B led to an increasing interest in the superconducting phases of wide-gapsemiconductors.
Subsequently superconductivity was found in heavily boron-dopedcubic silicon Si:B and recently in the stochiometric -mixture- of heavilyboron-doped silicon carbide SiC:B.
The latter system surprisingly exhibitstype-I superconductivity in contrast to the type-II superconductors C:B andSi:B.
Here we will focus on the specific heat of two different superconductingsamples of boron-doped SiC.
One of them contains cubic and hexagonal SiCwhereas the other consists mainly of hexagonal SiC without any detectable cubicphase fraction.
The electronic specific heat in the superconducting state ofboth samples SiC:B can be described by either assuming a BCS-type exponentionaltemperature dependence or a power-law behavior.



Autor: M.
Kriener, T.
Muranaka, Z.-A.
Ren, J.
Kato, J.
Akimitsu, Y.
Maeno


Fuente: https://arxiv.org/



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