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Journal of NanomaterialsVolume 2012 2012, Article ID 156986, 6 pages

Research ArticleState Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China

Received 27 April 2012; Revised 11 June 2012; Accepted 29 June 2012

Academic Editor: Xiaodong Pi

Copyright © 2012 Lingsheng Zeng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Vertical silicon nanowire Si NW arrays on a Si 100 substrate have been prepared by using a low-cost and facile Ag-assisted chemical etching technique. The reflectance of Si NW arrays is very low <1% in the spectral range from 400 to 1000 nm. By phosphorus diffusion into Si NW arrays to fabricate solar cells, the power conversion efficiency of 8.84% has been achieved. This power conversion efficiency is much higher than that of the planar cell with the similar celling technology. It is found that the efficiency of Si NW solar cells is intimately associated with their excellent antireflection property. The surface recombination of Si NWs is the main obstacle for the improvement of solar cell efficiency. The current results are helpful to the advancement of the application of Si NWs in photovoltaics.

Autor: Lingsheng Zeng, Xuegong Yu, Yangang Han, and Deren Yang



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