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VLSI Design - Volume 6 1998, Issue 1-4, Pages 243-246

Department of Electronics and Electrical Engineering, Glasgow University, Glasgow G12 8QQ, UK



Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We present a new approach to the simulation of ultra-small semiconductor devices based onBrownian motion of the carriers described by the Langevin equation. It follows the trajectoriesof individual particles in real space but does not require the computational effort of a fullMonte Carlo simulation. This method is particulary useful for modeling very small deviceswhere individual impurities and carries must be considered as discrete entities, and where amolecular dynamics approach is used in a full-scale three-dimensional simulation. We showthat this method gives the correct Maxwell-Boltzmann distribution and that it provides a gooddescription of transport through a short diode.





Autor: Clinton R. Arokianathan, Asen Asenov, and John H. Davies

Fuente: https://www.hindawi.com/



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