Optical Absorption and Electron Paramagnetic Resonance of the E'-alpha Center in Amorphous Silicon Dioxide - Condensed Matter > Materials ScienceReport as inadecuate




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Abstract: We report a combined study by optical absorption OA and electronparamagnetic resonance EPR spectroscopy on the E-alpha point defect inamorphous silicon dioxide a-SiO2. This defect has been studied in beta-rayirradiated and thermally treated oxygen-deficient a-SiO2 materials. Our resultshave pointed out that the E-alpha center is responsible for an OA Gaussianband peaked at 5.8 eV and having a full width at half maximum FWHM of 0.6 eV.The estimated oscillator strength of the related electronic transition is 0.14.Furthermore, we have found that this OA band is quite similar to that of theE-gamma center induced in the same materials, indicating that the relatedelectronic transitions involve states highly localized on a structure common toboth defects.



Author: G. Buscarino, R. Boscaino, S. Agnello, F. M. Gelardi

Source: https://arxiv.org/







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