K-edge XANES of substitutional and interstitial Mn atoms in Ga,MnAs - Condensed Matter > Materials ScienceReportar como inadecuado




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Abstract: This work reports theoretical and experimental study of the X-ray absorptionnear-edge structure XANES at the Mn K-edge in Ga,MnAs diluted magneticsemiconductors. The spectra have been calculated from the first-principlesusing FLAPW including the core-hole effect, a special attention has been paidto consequences of coexistence of Mn impurities in substitutional andtetrahedral interstitial positions. We have performed quantitative componentanalysis of experimental spectra collected on the Ga,MnAs samplesbefore-after annealing and etching, with the aim to determine the proportion ofMn impurity configurations. Comparison of the experimental data withtheoretical computations indicates that even after annealing and etching someMn atoms still reside in interstitial sites, although the concentration ofinterstitial defects has been reduced by annealing.



Autor: N. A. Goncharuk, L. Smrcka, J. Kucera, K. Olejnik, V. Novak, Z. Matej, L. Nichtova, V. Holy

Fuente: https://arxiv.org/







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