Study of low energy Si$ 5^-$ and Cs$^-$ implantation induced amorphization effects in Si100 - Condensed Matter > Materials ScienceReportar como inadecuado




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Abstract: The damage growth and surface modifications in Si100, induced by 25 keVSi$ 5^-$ cluster ions, as a function of fluence, $\phi$, has been studied usingatomic force microscopy AFM and channeling Rutherford backscatteringspectrometry CRBS. CRBS results indicate a nonlinear growth in damage fromwhich it has been possible to get a threshold fluence, $\phi 0$, foramorphization as $2.5\times 10^{13}$ ions-cm$^{-2}$. For $\phi$ below $\phi 0$,a growth in damage as well as surface roughness has been observed. At a $\phi$of $1\times 10^{14}$ ions-cm$^{-2}$, damage saturation coupled with a muchreduced surface roughness has been found. In this case a power spectrumanalysis of AFM data showed a significant drop, in spectral density, ascompared to the same obtained for a fluence, $\phi < \phi 0$. This drop,together with damage saturation, can be correlated with a transition to astress relaxed amorphous phase. Irradiation with similar mass Cs$^-$ ions, atthe same energy and fluence, has been found to result in a reduced accumulationof defects in the near surface region leading to reduced surface features.



Autor: H. P. Lenka, B. Joseph, P. K. Kuiri, G. Sahu, P. Mishra, D. Ghose, D. P. Mahapatra

Fuente: https://arxiv.org/







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