Direct-write, focused ion beam-deposited,7 K superconducting C-Ga-O nanowire - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: We have fabricated C-Ga-O nanowires by gallium focused ion beam-induceddeposition from the carbon-based precursor phenanthrene. The electricalconductivity of the nanowires is weakly temperature dependent below 300 K, andindicates a transition to a superconducting state below Tc = 7 K. We havemeasured the temperature dependence of the upper critical field Hc2T, andestimate a zero temperature critical field of 8.8 T. The Tc of this material isapproximately 40% higher than that of any other direct write nanowire, such asthose based on C-W-Ga, expanding the possibility of fabricating direct-writenanostructures that superconduct above liquid helium temperatures



Autor: Pashupati Dhakal, G. McMahon, T. Kirkpatrick, J.I. Oh, M.J. Naughton

Fuente: https://arxiv.org/







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