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Abstract: Dichalcogenides with the common formula MX2 are layered materials withelectrical properties that range from semiconducting to superconducting. Here,we describe optimal imaging conditions for optical detection of ultrathin,two-dimensional dichalcogenide nanocrystals containing single, double andtriple layers of MoS2, WSe2 and NbSe2. A simple optical model is used tocalculate the contrast for nanolayers deposited on wafers with varyingthickness of SiO2. The model is extended for imaging using the green channel ofa video camera. Using AFM and optical imaging we confirm that single layers ofMoS2, WSe2 and NbSe2 can be detected on 90nm and 270 nm SiO2 using opticalmeans. By measuring contrast under broad-band green illumination we are alsoable to distinguish between nanostructures containing single, mono and triplelayers of MoS2, WSe2 and NbSe2.



Autor: M.M. Benameur, B. Radisavljevic, S. Sahoo, H. Berger, A. Kis

Fuente: https://arxiv.org/



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