Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC 0001 for High Frequency Transistors - Condensed Matter > Materials ScienceReport as inadecuate




Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC 0001 for High Frequency Transistors - Condensed Matter > Materials Science - Download this document for free, or read online. Document in PDF available to download.

Abstract: Up to two layers of epitaxial graphene have been grown on the Si-face oftwo-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800cm^2-Vs, measured from ungated, large, 160 micron x 200 micron Hall bars, andup to 4000 cm^2-Vs, from top-gated, small, 1 micron x 1.5 micron Hall bars. Thegrowth process involved a combination of a cleaning step of the SiC in aSi-containing gas, followed by an annealing step in Argon for epitaxialgraphene formation. The structure and morphology of this graphene has beencharacterized using AFM, HRTEM, and Raman spectroscopy. Furthermore, top-gatedradio frequency field effect transistors RF-FETs with a peak cutoff frequencyfT of 100 GHz for a gate length of 240 nm were fabricated using epitaxialgraphene grown on the Si face of SiC that exhibited Hall mobilities up to 1450cm^2-Vs from ungated Hall bars and 1575 cm^2-Vs from top-gated ones. This is byfar the highest cut-off frequency measured from any kind of graphene.



Author: Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill, Damon B. Farmer, Marcus Freitag, Yanning Sun, Shu-Jen Han, Zhihong Chen, Kei

Source: https://arxiv.org/







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