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Abstract: Graphene devices on standard SiO2 substrates are highly disordered,exhibiting characteristics far inferior to the expected intrinsic properties ofgraphene1-12. While suspending graphene above the substrate yieldssubstantial improvement in device quality13,14, this geometry imposes severelimitations on device architecture and functionality. Realization ofsuspended-like sample quality in a substrate supported geometry is essential tothe future progress of graphene technology. In this Letter, we report thefabrication and characterization of high quality exfoliated mono- and bilayergraphene MLG and BLG devices on single crystal hexagonal boron nitride h-BNsubstrates, by a mechanical transfer process. Variable-temperaturemagnetotransport measurements demonstrate that graphene devices on h-BN exhibitenhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic dopingin comparison with SiO2-supported devices. The ability to assemble crystallinelayered materials in a controlled way sets the stage for new advancements ingraphene electronics and enables realization of more complex grapheneheterostructres.



Autor: C.R. Dean, A.F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K.L. Shepard, J. Hone

Fuente: https://arxiv.org/



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