Evidence of gate-tunable topological excitations in two-dimensional electron systems - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: Topological defects are ubiquitous from solid state physics to cosmology,where they drive phase transitions by proliferating as domain walls, monopolesor vortices. As quantum excitations, they often display fractional charge andanyonic statistics, making them relevant to topologically protected quantumcomputation, but realizing a controlled physical resource for topologicalexcitations has been difficult. Here we report evidence of topologicalexcitations during the localization transition in strongly interactingtwo-dimensional electron systems 2DESs in GaAs-AlGaAs heterostructures. Wefind the electrical conductivity at low electron densities to follow aBerezinskii-Kosterlitz Thouless BKT-like order-disorder transition implying agate-tunable proliferation of charged topological defects. At low temperatures,a weakening in the temperature dependence of conductivity was observed, andlinked to the zero point fluctuations and delocalization of the defects. Ourexperiments also cast crucial insight on the nature of the ground state instrongly interacting 2DESs in presence of disorder.



Autor: R. Koushik, Matthias Baenninger, Vijay Narayan, Subroto Mukerjee, Michael Pepper, Ian Farrer, David A. Ritchie, Arindam Ghosh

Fuente: https://arxiv.org/







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