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Abstract: We report on the broadband THz response of InGaAs-GaAs HEMTs operating at1.63 THz and room temperature deep in the saturation regime. We demonstratethat responses show linear increase with drain-to-source voltage or drain biascurrent and reach very high values up to 170V-W. We also develop aphenomenological theory valid both in the ohmic and in the saturation regimes.



Autor: T.A. Elkhatib, V. Yu. Kachorovskii, W. J. Stillman, S. Rumyantsev, X.-C. Zhang, M. S. Shur

Fuente: https://arxiv.org/







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