Ambipolar Graphene Field Effect Transistors by Local Metal Side Gates - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: We demonstrate ambipolar graphene field effect transistors individuallycontrolled by local metal side gates. The side gated field effect can haveon-off ratio comparable with that of the global back gate, and can be tuned ina large range by the back gate and-or a second side gate. We also find that theside gated field effect is significantly stronger by electrically floating theback gate compared to grounding the back gate, consistent with the finding fromelectrostatic simulation.



Autor: Jifa Tian, Luis A. Jauregui, Gabriel Lopez, Helin Cao, Yong P. Chen

Fuente: https://arxiv.org/







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