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Abstract: We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaPand Ge in THz frequency range at room temperature using nonlinear THzspectroscopy. The saturation mechanism is based on a decrease in electronconductivity of semiconductors at high electron momentum states, due toconduction band nonparabolicity and scattering into satellite valleys in strongTHz fields. Saturable absorber parameters, such as linear and non-saturabletransmission, and saturation fluence, are extracted by fits to a classicsaturable absorber model. Further, we observe THz pulse shortening, and anincrease of the group refractive index of the samples at higher THz pulse peakfields.



Autor: Matthias C. Hoffmann, Dmitry Turchinovich

Fuente: https://arxiv.org/







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