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Abstract: The materials science of graphene grown epitaxially on the hexagonal basalplanes of SiC crystals is reviewed. We show that the growth of epitaxialgraphene on Si-terminated SiC0001 is much different than growth on theC-terminated SiC000 -1 surface, and discuss the physical structure of thesegraphenes. The unique electronic structure and transport properties of eachtype of epitaxial graphene is described, as well as progress toward thedevelopment of epitaxial graphene devices. This materials system is rich insubtleties, and graphene grown on the two polar faces differs in importantways, but all of the salient features of ideal graphene are found in theseepitaxial graphenes, and wafer-scale fabrication of multi-GHz devices alreadyhas been achieved.



Autor: Phillip N. First, Walt A. de Heer, Thomas Seyller, Claire Berger, Joseph A. Stroscio, Jeong-Sun Moon

Fuente: https://arxiv.org/







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