Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: We measure the temperature of a mesoscopic system consisting of anultra-dilute two dimensional electron gas at the $Si-SiO 2$ interface in ametal-oxide-semiconductor field effect transistor MOSFET quantum dot by meansof the capture and emission of an electron in a point defect close to theinterface. Contrarily to previous reports, we show that the capture andemission by point defects in Si n-MOSFETs can be temperature dependent down to800 mK. As the finite quantum grand canonical ensemble model applies, the timedomain charge fluctuation in the defect is used to determine the temperature ofthe few electron gas in the channel.



Autor: Enrico Prati, Matteo Belli, Marco Fanciulli, Giorgio Ferrari

Fuente: https://arxiv.org/







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