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Abstract: We consider a model for a spin field-effect molecular transistor, where adirected pure spin current is controlled by an external electric field.Inelastic scattering effects of such molecular device are discussed within aframework of full counting statistics for a multi-level molecular system. Wepropose that the heating of the molecular junction can be controlled byexternal electric and magnetic fields. Characteristic features of the model aredemonstrated by numerical calculations.



Autor: Jonas Fransson, Michael Galperin

Fuente: https://arxiv.org/



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