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Abstract: Substantial progress on field effect transistors -FETs- consisting ofsemiconducting single wall carbon nanotubes -s-SWNTs- without detectable tracesof metallic nanotubes and impurities is reported. Nearly perfect removal ofmetallic nanotubes is confirmed by optical absorption, Raman measurements, andelectrical measurements. This outstanding result was made possible inparticular by ultracentrifugation 150 000 g of solutions prepared from SWNTpowders using polyfluorene as an extracting agent in toluene. Such s-SWNTsprocessable solutions were applied to realize FET, embodying randomly orpreferentially oriented nanotube networks prepared by spin coating ordielectrophoresis. Devices exhibit stable p-type semiconductor behavior in airwith very promising characteristics. The on-off current ratio is 10^5, theon-current level is around 10 $\mu$A, and the estimated hole mobility is largerthan 2 cm2 - V s.



Autor: Nicolas Izard AIST, Saïd Kazaoui AIST, Kenji Hata AIST, Toshiya Okazaki AIST, Takeshi Saito AIST, Sumio Iijima AIST, Nobutsugu M

Fuente: https://arxiv.org/







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