Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si - Condensed Matter > Mesoscale and Nanoscale PhysicsReportar como inadecuado




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Abstract: We use real-time reflection high energy electron diffraction intensityoscillation to establish the Te-rich growth dynamics of topological insulatorthin films of Bi2Te3 on Si111 substrate by molecular beam epitaxy. In situangle resolved photoemission spectroscopy ARPES, scanning tunnelingmicroscopy and ex situ transport measurements reveal that the as-grown Bi2Te3films without any doping are an intrinsic topological insulator with its Fermilevel intersecting only the metallic surface states. Experimentally, we findthat the single-Dirac-cone surface state develops at a thickness of twoquintuple layers 2 QL. Theoretically, we show that the interaction betweenthe surface states from both sides of the film, which is determined by thepenetration depth of the topological surface state wavefunctions, sets thislower thickness limit.



Autor: Yao-Yi Li, Guang Wang, Xie-Gang Zhu, Min-Hao Liu, Cun Ye, Xi Chen, Ya-Yu Wang, Ke He, Li-Li Wang, Xu-Cun Ma, Hai-Jun Zhang, Xi Da

Fuente: https://arxiv.org/







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